Carrillo-Nuñez, HamiltonMedina-Bailón, CristinaGeorgiev, Vihar PAsenov, Asen2025-01-072025-01-072020-10-15https://hdl.handle.net/10668/26686Fabrication techniques at the nanometer scale offer potential opportunities to access single-dopant features in nanoscale transistors. Here, we report full-band quantum transport simulations with hole-phonon interactions through a device consisting of two gates-all-around in series and a p-type Si nanowire channel with a single dopant within each gated region. For this purpose, we have developed and implemented a mode-space-based full-band quantum transport simulator with phonon scattering using the six-band k · p method. Based on the non-equilibrium Green's function formalism and self-consistent Born's approximation, an expression for the hole-phonon interaction self-energy within the mode-space representation is introduced.enAttribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/research article33055371open access10.1088/1361-6528/abacf31361-6528https://doi.org/10.1088/1361-6528/abacf3