TY  - JOUR
AU  - González, C
AU  - Biel, B
AU  - Dappe, Y J
PY  - 2016
DO  - 10.1088/0957-4484/27/10/105702
UR  - https://hdl.handle.net/10668/26685
T2  - Nanotechnology
AB  - Different S and Mo vacancies as well as their corresponding antisite defects in a free-standing MoS2 monolayer are analysed by means of scanning tunnelling microscopy (STM) simulations. Our theoretical methodology, based on the Keldysh nonequilibrium...
LA  - en
TI  - Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy.
TY  - research article
VL  - 27
ER  -