TY  - JOUR
AU  - Carrillo-Nuñez, Hamilton
AU  - Medina-Bailón, Cristina
AU  - Georgiev, Vihar P
AU  - Asenov, Asen
PY  - 2020
DO  - 10.1088/1361-6528/abacf3
UR  - https://hdl.handle.net/10668/26686
T2  - Nanotechnology
AB  - Fabrication techniques at the nanometer scale offer potential opportunities to access single-dopant features in nanoscale transistors. Here, we report full-band quantum transport simulations with hole-phonon interactions through a device consisting of...
LA  - en
TI  - Full-band quantum transport simulation in the presence of hole-phonon interactions using a mode-space k·p approach.
TY  - research article
VL  - 32
ER  -