RT Journal Article
T1 Full-band quantum transport simulation in the presence of hole-phonon interactions using a mode-space k·p approach.
A1 Carrillo-Nuñez, Hamilton
A1 Medina-Bailón, Cristina
A1 Georgiev, Vihar P
A1 Asenov, Asen
AB Fabrication techniques at the nanometer scale offer potential opportunities to access single-dopant features in nanoscale transistors. Here, we report full-band quantum transport simulations with hole-phonon interactions through a device consisting of two gates-all-around in series and a p-type Si nanowire channel with a single dopant within each gated region. For this purpose, we have developed and implemented a mode-space-based full-band quantum transport simulator with phonon scattering using the six-band k · p method. Based on the non-equilibrium Green's function formalism and self-consistent Born's approximation, an expression for the hole-phonon interaction self-energy within the mode-space representation is introduced.
YR 2020
FD 2020-10-15
LK https://hdl.handle.net/10668/26686
UL https://hdl.handle.net/10668/26686
LA en
DS RISalud
RD Apr 6, 2025